 | | Mechanics of Solids
A Journal of Russian Academy of Sciences | | Founded
in January 1966
Issued 6 times a year
Print ISSN 0025-6544
Online ISSN 1934-7936 |
Archive of Issues
| Total articles in the database: | | 12804 |
| In Russian (Èçâ. ÐÀÍ. ÌÒÒ): | | 8044
|
| In English (Mech. Solids): | | 4760 |
|
| << Previous article | Volume 55, Issue 1 / 2020 | Next article >> |
| A.V. Babaev, V.K. Nevolin, V.N. Statsenko, S.D. Fedotov, and K.A. Tsarik, "Singularities of the Thin AlN Layers Formation by Molecular Beam Epitaxy on 3C−SiC/Si(111) Templates with On-Axis and 4° Off-Axis Disorientation," Mech. Solids. 55 (1), 84-89 (2020) |
| Year |
2020 |
Volume |
55 |
Number |
1 |
Pages |
84-89 |
| DOI |
10.3103/S0025654420010045 |
| Title |
Singularities of the Thin AlN Layers Formation by Molecular Beam Epitaxy on 3C−SiC/Si(111) Templates with On-Axis and 4° Off-Axis Disorientation |
| Author(s) |
A.V. Babaev (ONSI Ltd., Zelenograd, Moscow, 124482 Russia; Joint-Stock Company "Epiel", Zelenograd, Moscow, 124460 Russia)
V.K. Nevolin (National Research University of Electronic Technology-MIET, Zelenograd, Moscow, 124498 Russia)
V.N. Statsenko (Joint-Stock Company "Epiel", Zelenograd, Moscow, 124460 Russia)
S.D. Fedotov (ONSI Ltd., Zelenograd, Moscow, 124482 Russia; Joint-Stock Company "Epiel", Zelenograd, Moscow, 124460 Russia, fedotov.s.d@yandex.ru)
K.A. Tsarik (National Research University of Electronic Technology-MIET, Zelenograd, Moscow, 124498 Russia) |
| Abstract |
In this article, we studied the growth characteristics of AlN epitaxial layers on 3Ñ−SiC/Si(111) templates at various values of atomic flux of aluminum at a constant growth temperature and a constant flow of atomic nitrogen. The AFM method was used to study the morphology of the resulting structures. The minimum roughness was achieved at a growth rate of 150 nm/h on on-axis templates, and at 90 nm/h on off-axis templates. Epitaxial layers of hexagonal AlN with root mean square roughness of less than 3 nm were obtained on 3Ñ−SiC/Si(111) templates with a diameter of 100 mm, in which there was no grain structure. Single-crystal AlN (0002) layers with FWHM (ω-geometry) values of about 1.4° were obtained. |
| Keywords |
molecular beam epitaxy, MBE, gallium nitride, GaN, aluminum nitride, AlN, silicon carbide, 3C−SiC |
| Received |
10 March 2018 | Revised |
04 April 2019 | Accepted |
24 April 2019 |
| Link to Fulltext |
|
| << Previous article | Volume 55, Issue 1 / 2020 | Next article >> |
|
 If you find a misprint on a webpage, please help us correct it promptly - just highlight and press Ctrl+Enter
|
|
Russian 
English