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R.V. Goldstein, V.A. Gorodtsov, and P.S. Shushpannikov, "Simulation of Stress-Strain State in SiGe Island Heterostructures," Mech. Solids. 45 (3), 312-323 (2010)
Year 2010 Volume 45 Number 3 Pages 312-323
DOI 10.3103/S0025654410030027
Title Simulation of Stress-Strain State in SiGe Island Heterostructures
Author(s) R.V. Goldstein (Ishlinsky Institute for Problems in Mechanics, Russian Academy of Sciences, pr-t Vernadskogo 101, str. 1, Moscow, 119526 Russia, goldst@ipmnet.ru)
V.A. Gorodtsov (Ishlinsky Institute for Problems in Mechanics, Russian Academy of Sciences, pr-t Vernadskogo 101, str. 1, Moscow, 119526 Russia, gorod@ipmnet.ru)
P.S. Shushpannikov (Ishlinsky Institute for Problems in Mechanics, Russian Academy of Sciences, pr-t Vernadskogo 101, str. 1, Moscow, 119526 Russia, shushpan@ipmnet.ru)
Abstract The problem of simulation of the stress-strain state in SiGe island heterostructures is considered. The analytic-numerical method of multipole expansions is used to obtain an approximate solution. The problem of the stressed state influence on the diffusion mobility of atoms adsorbed on the heterostructure free surface is also discussed.
Keywords island heterostructures,"quantum dots," multipole expansion method
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Received 01 February 2010
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