Mechanics of Solids (about journal) Mechanics of Solids
A Journal of Russian Academy of Sciences
 Founded
in January 1966
Issued 6 times a year
Print ISSN 0025-6544
Online ISSN 1934-7936

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IssuesArchive of Issues2020-5pp.643-653

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N.A. Verezub and A.I. Prostomolotov, "Mechanics of Growing and Heat Treatment Processes of Monocrystalline Silicon," Mech. Solids. 55 (5), 643-653 (2020)
Year 2020 Volume 55 Number 5 Pages 643-653
DOI 10.3103/S0025654420300056
Title Mechanics of Growing and Heat Treatment Processes of Monocrystalline Silicon
Author(s) N.A. Verezub (Ishlinsky Institute for Problems in Mechanics, RAS, Moscow, 119526 Russia, verezub@ipmnet.ru)
A.I. Prostomolotov (Ishlinsky Institute for Problems in Mechanics, RAS, Moscow, 119526 Russia, prosto@ipmnet.ru)
Abstract One of the urgent problems of mechanics is the study of the regularities of thermomechanical processes that affect the formation of microdefects in dislocation-free silicon single crystals both at the stage of their growth from the melt by the main industrial technology called the Czochralski method, and in subsequent heat treatment technologies of the wafers cut from them. This requires the development of coupled thermomechanical models both for the melt-crystal system, taking into account the crystallization process, and for the entire volume of the thermal unit of industrial growth plants, so that, taking into account the calculated “thermal history” of growing a particular silicon single crystal using modern models of defect formation, determine the regularities of the recombination and transfer processes. intrinsic point defects with their agglomeration into microdefects in monocrystalline silicon. This article provides a brief overview of the work carried out at IPMech RAS in this direction.
Keywords single crystal growth, silicon, Czochralski method, intrinsic point defect, recombination, microdefect, diffusion, modeling, stress, deformation, heat treatment, plate
Received 21 January 2020Revised 19 February 2020Accepted 04 April 2020
Link to Fulltext https://link.springer.com/article/10.3103/S0025654420300056
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