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A Journal of Russian Academy of Sciences
 Founded
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IssuesArchive of Issues2025-8pp.7213-7238

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Ahmed E. Abouelregal, Nouf A. Alrubea, and Marin Marin, "A Fractional Nonlocal Thermoviscoelastic Framework Incorporating Non-Singular Kernels and Length-Scale Effects: Analysis of Rotating Cylindrical Semiconductor under Pulse Heating," Mech. Solids. 60 (8), 7213-7238 (2025)
Year 2025 Volume 60 Number 8 Pages 7213-7238
DOI 10.1134/S0025654425606470
Title A Fractional Nonlocal Thermoviscoelastic Framework Incorporating Non-Singular Kernels and Length-Scale Effects: Analysis of Rotating Cylindrical Semiconductor under Pulse Heating
Author(s) Ahmed E. Abouelregal (Department of Mathematics, College of Science, Jouf University, Sakaka, 2014 Saudi Arabia, ahabogal@ju.edu.sa)
Nouf A. Alrubea (Department of Mathematics, College of Science, Jouf University, Sakaka, 77455 Saudi Arabia)
Marin Marin (Department of Mathematics and Computer Science, Transilvania University of Brasov, Brasov, Romania; Academy of Romanian Scientists, Bucharest, 050044 Romania, m.marin@unitbv.ro)
Abstract This study presents a novel and thermodynamically consistent framework designed to overcome key limitations of classical viscoelastic and thermoelastic theories, which fail to capture memory effects, size-dependent phenomena, and ultrafast thermal responses in micro- and nano-scale semiconductor devices. The proposed model uniquely integrates fractional calculus with nonlocal continuum mechanics by employing the Caputo–Fabrizio fractional derivative, characterized by a smooth, non-singular exponential kernel that avoids unphysical singularities while preserving realistic fading memory behavior. In addition, the model incorporates dual relaxation times to account for phase-lagged heat conduction and carrier diffusion, along with a nonlocal length-scale parameter that captures long-range atomic interactions. The framework is specifically applied to a rotating cylindrical semiconductor subjected to pulsed laser heating, a physically relevant scenario for high-speed optoelectronic and microelectromechanical systems operating under transient thermal and mechanical loads. The solution methodology combines analytical techniques based on Laplace transforms with robust numerical inversion to solve the fully coupled multiphysics problem involving thermal, mechanical, electronic, and electromagnetic fields. Key findings from parametric analyses reveal that the fractional order, nonlocal scale, angular velocity, laser pulse duration, and thermal/carrier phase lags all significantly influence the distributions of temperature, carrier density, displacement, and stress. Critically, the results demonstrate that ignoring nonlocal effects or relying on classical integer-order derivatives leads to substantial inaccuracies in predicting photothermal and thermomechanical responses. This model offers a more accurate, physically grounded, and reliable predictive tool for the design and performance assessment of next-generation semiconductor-based devices, such as high-speed rotating micro-gyroscopes, laser-driven actuators, photothermal nanosensors, and other micro-electromechanical systems where precise control of coupled thermal, mechanical, and electronic behavior under ultrafast excitation is essential.
Keywords Fractional Caputo–Fabrizio derivative, nonlocal length-scale effects, micro- and nano- scale modeling, dual-phase-lag photothermal coupling
Received 03 November 2025Revised 14 December 2025Accepted 15 December 2025
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