 | | Mechanics of Solids
A Journal of Russian Academy of Sciences | | Founded
in January 1966
Issued 6 times a year
Print ISSN 0025-6544
Online ISSN 1934-7936 |
Archive of Issues
| Total articles in the database: | | 13288 |
| In Russian (Èçâ. ÐÀÍ. ÌÒÒ): | | 8164
|
| In English (Mech. Solids): | | 5124 |
|
| << Previous article | Volume 60, Issue 4 / 2025 | Next article >> |
| Praveen Ailawalia, Alwaleed Kamel, Amr M.S. Mahdy, Kh. Lotfy, and Abhilasha Saini, "Photothermal Response of a Cracked Semiconductor Strip Under Antiplane Shear Deformation," Mech. Solids. 60 (4), 3118-3131 (2025) |
| Year |
2025 |
Volume |
60 |
Number |
4 |
Pages |
3118-3131 |
| DOI |
10.1134/S0025654425602137 |
| Title |
Photothermal Response of a Cracked Semiconductor Strip Under Antiplane Shear Deformation |
| Author(s) |
Praveen Ailawalia (Department of Mathematics, Faculty of Science, Islamic University of Madinah, Madinah, Saudi Arabia, Praveen_2117@rediffmail.com)
Alwaleed Kamel (Department of Mathematics, University Institute of Sciences, Chandigarh University, Gharuan-Mohali, Punjab, India, kalwaleed@iu.edu.sa)
Amr M.S. Mahdy (Department of Mathematics and Statistics, College of Science, Taif University, Taif, 21944 Saudi Arabia, amattaya@tu.edu.sa)
Kh. Lotfy (Department of Mathematics, College of Science, Taibah University, Al-Madinah Al-Munawarah, 30002 Saudi Arabia, kazab@taibahu.edu.sa)
Abhilasha Saini (Department of Mathematics, Faculty of Science, Islamic University of Madinah, Madinah, Saudi Arabia, abhilashasaini21@gmail.com) |
| Abstract |
his work presents an analytical investigation of photothermal effects in a semiconducting
strip containing a traction-free crack under antiplane shear deformation. A novel coupling between
mechanical displacement, temperature field, and carrier density is considered under constant thermal
loading at the upper boundary, extending traditional antiplane crack models. Solutions for displacement, temperature, carrier density, and shear stresses are obtained using Fourier transform techniques
within the frameworks of Lord–Shulman, Green-Lindsay, and Classical Coupled Thermoelasticity
theories. Numerical evaluations performed via MATLAB reveal pronounced differences among the
three models, particularly in the attenuation of temperature and stress fields near the crack tip due to
thermal relaxation effects. These results provide new insights into the thermomechanical behavior of
semiconductor materials with defects, offering a foundation for improving the design of optoelectronic
and microelectromechanical systems under combined thermal and mechanical loading. |
| Keywords |
Crack, Semiconducting, Photothermal, Shear stress, Carrier density, Temperature distribution |
| Received |
29 April 2025 | Revised |
22 May 2025 | Accepted |
22 May 2025 |
| Link to Fulltext |
|
| << Previous article | Volume 60, Issue 4 / 2025 | Next article >> |
|
 If you find a misprint on a webpage, please help us correct it promptly - just highlight and press Ctrl+Enter
|
|
Russian 
English