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A Journal of Russian Academy of Sciences
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IssuesArchive of Issues2025-4pp.2617-2630

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Ibrahim Abbas, Areej Almuneef, Iaa. A. El-Bary, and Zuhur Alqahtani, "A Study on a Novel Photothermal without Energy Dissipation Model in Semiconductor Materials," Mech. Solids. 60 (4), 2617-2630 (2025)
Year 2025 Volume 60 Number 4 Pages 2617-2630
DOI 10.1134/S0025654425600941
Title A Study on a Novel Photothermal without Energy Dissipation Model in Semiconductor Materials
Author(s) Ibrahim Abbas (Mathematics Department, Faculty of Science, Sohag University, Egypt, ibrabbas7@science.sohag.edu.eg)
Areej Almuneef (Department of Mathematical Sciences, College of Science, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh, 11671 Saudi Arabia, aaalmuneef@pnu.edu.sa)
Iaa. A. El-Bary (Institute of Basic and Applied Science, Arab Academy for Science, Technology and Maritime Transport, Alexandria, Egypt, aaelbary@aast.edu)
Zuhur Alqahtani (Department of Mathematical Sciences, College of Science, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh, 11671 Saudi Arabia, zumalqahtani@pnu.edu.sa)
Abstract This study investigates the photothermoelastic analysis of a semiconductor medium under fully coupled of Green–Naghdi’s (GNII) theory without energy dissipation. Closed-form exact solutions are derived for the physical quantities due to an exponentially decaying heat pulse at the surface. The analysis employs Laplace transform with the eigenvalue technique to obtain explicit solutions for all variables. Numerical results are provided to evaluate the proposed methodology in a simplified semiconductor geometry. The findings are discussed in detail, offering insights into the thermoelastic behavior of the medium under thermal excitation.
Keywords Green–Naghdi’s (GNII) theory, Laplace transforms, eigenvalues approach, Fully coupled photothermoelastic model, heat flux
Received 01 March 2025Revised 20 March 2025Accepted 23 April 2025
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