 | | Mechanics of Solids
A Journal of Russian Academy of Sciences | | Founded
in January 1966
Issued 6 times a year
Print ISSN 0025-6544
Online ISSN 1934-7936 |
Archive of Issues
| Total articles in the database: | | 13025 |
| In Russian (Èçâ. ÐÀÍ. ÌÒÒ): | | 8110
|
| In English (Mech. Solids): | | 4915 |
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| R.A. Mohamed, A.M. Abd-Allah, S.M. Abo-Dahab, H.A. Abd-Elahmeid, and S.H. Elhag, "Ramp Type Heating in a Semiconductor Medium under Initial Stress and Photothermal Theory," Mech. Solids. 59 (6), 3481-3494 (2024) |
| Year |
2024 |
Volume |
59 |
Number |
6 |
Pages |
3481-3494 |
| DOI |
10.1134/S0025654424604658 |
| Title |
Ramp Type Heating in a Semiconductor Medium under Initial Stress and Photothermal Theory |
| Author(s) |
R.A. Mohamed (Mathematics Department, Faculty of Science, South Valley University, Qena, Egypt, rabdalla_1953@yahoo.com)
A.M. Abd-Allah (Mathematics Department, Faculty of Science, Sohag University, Sohag, Egypt, mohmrr@yahoo.com)
S.M. Abo-Dahab (Mathematics Department, Faculty of Science, South Valley University, Qena, Egypt, sdahb@yahoo.com)
H.A. Abd-Elahmeid (Mathematics Department, Faculty of Science, South Valley University, Qena, Egypt, hagar16714@gmail.com)
S.H. Elhag (Department of Mathematics and Statistics, College of Science, Taif University, Taif, 21944 Saudi Arabia, h.sfaa@tu.edu.sa) |
| Abstract |
This study investigates deformations within a homogeneous semiconductor thermoelastic medium subjected to initial stress and ramp type heating employing the theoretical photothermal
model. Utilizing the normal mode method, precise expressions for key distributions, such as temperature, carrier density, stresses and displacement components, are derived. Numerical computations are
facilitated through Mathematica programming, focusing on a material exhibiting properties analogous
to a silicon. Integrating Photothermal model, initial stress, wave number and time, the research visually portrays the impact of these factors on the considered state variables through graphical representations. The numerical and graphical results underscore the significant influence of wave number,
time, and initial stress on the various field quantities. This investigation provides valuable insights into
the synergistic dynamics among an initial stress constituent, semiconductor structures, and wave
propagation, enabling advancements in nuclear reactors’ construction, operation, electrical circuits, and solar cells. |
| Keywords |
Photothermal, ramp type heating, initial stress, semiconductor, thermoelasticity |
| Received |
16 July 2024 | Revised |
13 October 2024 | Accepted |
20 October 2024 |
| Link to Fulltext |
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