 | | Mechanics of Solids
A Journal of Russian Academy of Sciences | | Founded
in January 1966
Issued 6 times a year
Print ISSN 0025-6544
Online ISSN 1934-7936 |
Archive of Issues
| Total articles in the database: | | 12949 |
| In Russian (Èçâ. ÐÀÍ. ÌÒÒ): | | 8096
|
| In English (Mech. Solids): | | 4853 |
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| Khaled Lotfy, Alaa El-Bary, Eslam Elidy, Ramdan Tantawi, Abdelaala Ahmed, Mohamed S. Mohamed, and A.M.S. Mahdy, "A Novel Model of Stochastic Photo-Elasto-Thermodiffusion Waves Interaction in Semiconductors," Mech. Solids. 59 (4), 2301-2321 (2024) |
| Year |
2024 |
Volume |
59 |
Number |
4 |
Pages |
2301-2321 |
| DOI |
10.1134/S002565442460452X |
| Title |
A Novel Model of Stochastic Photo-Elasto-Thermodiffusion Waves Interaction in Semiconductors |
| Author(s) |
Khaled Lotfy (Department of Mathematics, Faculty of Science, Zagazig University, Zagazig, Egypt; Department of Mathematics, College of Science, Taibah University, Al-Madinah Al-Munawarah, 30002 Saudi Arabia, khlotfy_1@yahoo.com)
Alaa El-Bary (Arab Academy for Science, Technology and Maritime Transport, Alexandria, Egypt; Council of futuristic studies and risk management, Academy of Scientific Research and Technology, Cairo, Egypt, aaelbary@aast.edu)
Eslam Elidy (Department of Mathematics, Faculty of Science, Zagazig University, Zagazig, Egypt, eslamelidy@yahoo.com)
Ramdan Tantawi (Department of Mathematics, Faculty of Science, Zagazig University, Zagazig, Egypt, ramadan_tantawi1@yahoo.com)
Abdelaala Ahmed (Department of Mathematics, Faculty of Science, Zagazig University, Zagazig, Egypt, abdoahmed199590@gmail.com)
Mohamed S. Mohamed (Department of Mathematics and Statistics, College of Science, Taif University, Taif, 21944 Saudi Arabia, m.saaad@tu.edu.sa)
A.M.S. Mahdy (Department of Mathematics and Statistics, College of Science, Taif University, Taif, 21944 Saudi Arabia, amr_mahdy85@yahoo.com) |
| Abstract |
The implementation of a stochastic simulation was carried out using an elastic-thermodiffusion (ETD) model of the electrons-holes interaction problem, utilizing photo-thermoelastic theory.
This study investigates deformations in a two-dimensional (2D) context, incorporating the influences
of thermoelastic (TD) and electronic (ED) transport mechanisms. The use of a Weiner function or
white noise with a boundary condition introduces a stochastic component, hence enhancing the realism of the problem. The normal mode analysis was employed to obtain deterministic and stochastic
outcomes for all physical quantities. Three unique paths are developed to evaluate the dispersion of the
stochastic and deterministic fields. The mean and standard deviation of the most pertinent physical
variables are calculated and examined. Silicon (Si) semiconductor materials are utilized for modeling and analysis. The study included the provision of graphs and discussions about the obtained results. |
| Keywords |
stochastic, white noise, electrons, holes, thermo-diffusion, semiconductors |
| Received |
08 July 2024 | Revised |
02 August 2024 | Accepted |
04 August 2024 |
| Link to Fulltext |
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