 | | Mechanics of Solids
A Journal of Russian Academy of Sciences | | Founded
in January 1966
Issued 6 times a year
Print ISSN 0025-6544
Online ISSN 1934-7936 |
Archive of Issues
| Total articles in the database: | | 12949 |
| In Russian (Èçâ. ÐÀÍ. ÌÒÒ): | | 8096
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| In English (Mech. Solids): | | 4853 |
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| M. Raddadi, A.M.S. Mahdy, Fatema Al Najim, Riadh Chteoui, W.S. Hassanin, A. El-Bary, and Kh. Lotfy, "Varying Thermal Conductivities of Microelongated Excited Electron-Hole Optical Waves in Semiconductors subjected to Ramp-Type Heating," Mech. Solids. 59 (4), 2020-2036 (2024) |
| Year |
2024 |
Volume |
59 |
Number |
4 |
Pages |
2020-2036 |
| DOI |
10.1134/S0025654424603604 |
| Title |
Varying Thermal Conductivities of Microelongated Excited Electron-Hole Optical Waves in Semiconductors subjected to Ramp-Type Heating |
| Author(s) |
M. Raddadi (Department of Mathematics, College of Science, Taibah University, Al-Madinah Al-Munawarah, 30002 Saudi Arabia, mhraddadi@taibahu.edu.sa)
A.M.S. Mahdy (Department of Mathematics and Statistics, College of Science, Taif University, Taif, 21944 Saudi Arabia, amattaya@tu.edu.sa)
Fatema Al Najim (Department of Mathematics and Statistics, College of Science, King Faisal University, Al-Ahsa, 31982 Saudi Arabia, falnajem@kfu.edu.sa)
Riadh Chteoui (Department of Mathematics, Dhiba-College University, University of Tabuk, Doba, Saudi Arabia, ralshtaiwi@ut.edu.sa)
W.S. Hassanin (Faculty of Science, Department of Mathematics, Helwan University, Cairo, Egypt, wshassanin@gmail.com)
A. El-Bary (Arab Academy for Science, Technology and Maritime Transport, Alexandria, Egypt, aaelbary@aast.edu)
Kh. Lotfy (Department of Mathematics, College of Science, Taibah University, Al-Madinah Al-Munawarah, 30002 Saudi Arabia;Department of Mathematics, Faculty of Science, Zagazig University, Zagazig, Egypt, khlotfy_1@yahoo.com) |
| Abstract |
In this work, a novel model is presented that might explain the occurrence of elastic-mechanical-thermodiffusion (EMTD) waves in microelongated semiconductors. When analyzing the optoelectronic impact of laser pulses on a semiconductor material, it is important to take into account
the interaction between holes and electrons. As a function of the thermal effect, thermal conductivity
may be chosen. The photothermal (PT) theory and the thermoelasticity (TE) theory are used to
decompose the governing equations with the temperature gradient. The fundamental equations are
explained in terms of a one-dimensional (1D) thermoelastic (TED) and electronic (ED) deformation.
The Laplace transform is a mathematical tool for obtaining the main physical fields. Some boundary
conditions are taken at the free surface, and they are crucial to the technique by which the issue is solved. The Riemann-sum approximation technique is used to invert the Laplace transform to find the
field solutions in the closed space-time domain. The mechanical ramp type of boundary conditions is
used. Some comparisons are done under the influence of laser pulses and changing thermal conductivity and variable thermal memory based on numerical data and graphical representations of silicon material. |
| Keywords |
optoelectronics, photothermal, microelongation, ramp type heating, semiconductors, thermal conductivity |
| Received |
02 May 2024 | Revised |
17 July 2024 | Accepted |
24 July 2024 |
| Link to Fulltext |
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