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A Journal of Russian Academy of Sciences
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IssuesArchive of Issues2024-3pp.1568-1587

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Kh. Lotfy, A. Mahdy, Nesreen A. Yaseen, A. El-Bary, and W.S. Hassanin, "A Novel Magneto-Photo-Elasto-Thermodiffusion Model of Electrons-Holes Microtemperature Semiconductor Stability Medium," Mech. Solids. 59 (3), 1568-1587 (2024)
Year 2024 Volume 59 Number 3 Pages 1568-1587
DOI 10.1134/S002565442460346X
Title A Novel Magneto-Photo-Elasto-Thermodiffusion Model of Electrons-Holes Microtemperature Semiconductor Stability Medium
Author(s) Kh. Lotfy (Department of Mathematics, Faculty of Science, Zagazig University, Zagazig, Egypt; Department of Mathematics, College of Science, Taibah University, Al-Madinah Al-Munawarah, 30002 Saudi Arabia, khlotfy_1@yahoo.com)
A. Mahdy (Department of Mathematics and Statistics, College of Science, Taif University, Taif 21944 Saudi Arabia, amattaya@tu.edu.sa)
Nesreen A. Yaseen (Department of Information Systems, Higher Institute for Computers Science, El-Shorouk Academy, Cairo, Egypt, dr.nisreenyassin@sha.edu.eg)
A. El-Bary (Arab Academy for Science, Technology and Maritime Transport, Alexandria, Egypt, aaelbary@aast.edu)
W.S. Hassanin (Faculty of Science, Department of Mathematics, Helwan University, Cairo, Egypt, wshassanin@gmail.com)
Abstract This study uses a theoretical mathematical and physical model to investigate the interaction between electrons and holes in a semiconductor material. Our focus is on studying the elasto-thermo-diffusion (ETD) theory, particularly in the context of photothermal transport processes that incorporate the influence of microtemperature. The examination of the governing equations considers the impact of the magnetic field. We study the one-dimensional deformation resulting from the interplay of electronic and thermoelastic phenomena, including hole mechanisms. For the primary physical parameters, we obtain dimensionless field values theoretically. To solve the system of equations, we use mathematical methods such as Laplace transforms and account for specific initial conditions. The initial conditions are defined at the boundary for the primary physical fields, which experience ramp heating in the Laplace domain. We then use Laplace inverse transforms and approximations to obtain closed-form solutions in the time domain for the main fields. Graphical comparisons are made to analyze the propagation of these fields under various parameters when the stability cases are studied. The study aims to determine whether or not one-dimensional stabilities predominate at a specific magnetic field, which is relevant for industrial or environmental applications. The paper goes into great detail about these findings.
Keywords electrons and holes, thermal diffusivity, plasmaelastic, magnetic field, optical properties, Semiconductors
Received 23 April 2024Revised 17 May 2024Accepted 17 May 2024
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