| | Mechanics of Solids A Journal of Russian Academy of Sciences | | Founded
in January 1966
Issued 6 times a year
Print ISSN 0025-6544 Online ISSN 1934-7936 |
Archive of Issues
Total articles in the database: | | 12804 |
In Russian (Èçâ. ÐÀÍ. ÌÒÒ): | | 8044
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In English (Mech. Solids): | | 4760 |
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<< Previous article | Volume 59, Issue 3 / 2024 | Next article >> |
Kh. Lotfy, A. Mahdy, Nesreen A. Yaseen, A. El-Bary, and W.S. Hassanin, "A Novel Magneto-Photo-Elasto-Thermodiffusion Model of Electrons-Holes Microtemperature Semiconductor Stability Medium," Mech. Solids. 59 (3), 1568-1587 (2024) |
Year |
2024 |
Volume |
59 |
Number |
3 |
Pages |
1568-1587 |
DOI |
10.1134/S002565442460346X |
Title |
A Novel Magneto-Photo-Elasto-Thermodiffusion Model of Electrons-Holes Microtemperature Semiconductor Stability Medium |
Author(s) |
Kh. Lotfy (Department of Mathematics, Faculty of Science, Zagazig University, Zagazig, Egypt; Department of Mathematics, College of Science, Taibah University, Al-Madinah Al-Munawarah, 30002 Saudi Arabia, khlotfy_1@yahoo.com)
A. Mahdy (Department of Mathematics and Statistics, College of Science, Taif University, Taif 21944 Saudi Arabia, amattaya@tu.edu.sa)
Nesreen A. Yaseen (Department of Information Systems, Higher Institute for Computers Science, El-Shorouk Academy, Cairo, Egypt, dr.nisreenyassin@sha.edu.eg)
A. El-Bary (Arab Academy for Science, Technology and Maritime Transport, Alexandria, Egypt, aaelbary@aast.edu)
W.S. Hassanin (Faculty of Science, Department of Mathematics, Helwan University, Cairo, Egypt, wshassanin@gmail.com) |
Abstract |
This study uses a theoretical mathematical and physical model to investigate the interaction
between electrons and holes in a semiconductor material. Our focus is on studying the elasto-thermo-diffusion (ETD) theory, particularly in the context of photothermal transport processes that incorporate the influence of microtemperature. The examination of the governing equations considers the
impact of the magnetic field. We study the one-dimensional deformation resulting from the interplay
of electronic and thermoelastic phenomena, including hole mechanisms. For the primary physical
parameters, we obtain dimensionless field values theoretically. To solve the system of equations, we
use mathematical methods such as Laplace transforms and account for specific initial conditions.
The initial conditions are defined at the boundary for the primary physical fields, which experience
ramp heating in the Laplace domain. We then use Laplace inverse transforms and approximations to
obtain closed-form solutions in the time domain for the main fields. Graphical comparisons are made
to analyze the propagation of these fields under various parameters when the stability cases are studied.
The study aims to determine whether or not one-dimensional stabilities predominate at a specific
magnetic field, which is relevant for industrial or environmental applications. The paper goes into great detail about these findings. |
Keywords |
electrons and holes, thermal diffusivity, plasmaelastic, magnetic field, optical properties, Semiconductors |
Received |
23 April 2024 | Revised |
17 May 2024 | Accepted |
17 May 2024 |
Link to Fulltext |
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