 | | Mechanics of Solids
A Journal of Russian Academy of Sciences | | Founded
in January 1966
Issued 6 times a year
Print ISSN 0025-6544
Online ISSN 1934-7936 |
Archive of Issues
| Total articles in the database: | | 12804 |
| In Russian (Èçâ. ÐÀÍ. ÌÒÒ): | | 8044
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| In English (Mech. Solids): | | 4760 |
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| A.S. Grashchenko, S.A. Kukushkin, and A.V. Osipov, "Elastic Properties of GaN and AlN Films Formed on SiC/Si Hybrid Substrate, a Porous Basis," Mech. Solids. 55 (2), 157-161 (2020) |
| Year |
2020 |
Volume |
55 |
Number |
2 |
Pages |
157-161 |
| DOI |
10.3103/S0025654420020107 |
| Title |
Elastic Properties of GaN and AlN Films Formed on SiC/Si Hybrid Substrate, a Porous Basis |
| Author(s) |
A.S. Grashchenko (ITMO University, St. Petersburg, 197101 Russia, asgrashchenko@bk.ru)
S.A. Kukushkin (Institute for Problems in Mechanical Engineering of the RAS, St. Petersburg, 199078 Russia; Peter the Great St. Petersburg Polytechnic University, St. Petersburg, 195251 Russia; Herzen State Pedagogical University of Russia, St. Petersburg, 191186 Russia)
A.V. Osipov (Institute for Problems in Mechanical Engineering of the RAS, St. Petersburg, 199078 Russia) |
| Abstract |
The nanoindentation method was used to study the elastic properties of gallium nitride and aluminum nitride films grown on nanoscale silicon carbide on silicon (SiC/Si), a new type of substrate. The values of the Young's modulus of epitaxial films of such wide-gap semiconductors as GaN and AlN, grown on substrates SiC/Si. were determined for the first time. It was experimentally established using the nanoindentation method that the Young's modulus of the GaN epitaxial layer on SiC/Si is 265 GPa, and that of the AlN film is 223 GPa. Using atomic force microscopy and spectral ellipsometry, the structural characteristics of gallium nitride and aluminum nitride films have been studied. The thicknesses of the films and the roughness of their surface are determined. |
| Keywords |
nanoindentation, films, Young's modulus, semiconductors, gallium nitride, aluminum nitride |
| Received |
03 August 2019 | Revised |
11 August 2019 | Accepted |
19 September 2019 |
| Link to Fulltext |
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