Mechanics of Solids (about journal) Mechanics of Solids
A Journal of Russian Academy of Sciences
 Founded
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IssuesArchive of Issues2020-2pp.157-161

Archive of Issues

Total articles in the database: 10864
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A.S. Grashchenko, S.A. Kukushkin, and A.V. Osipov, "Elastic Properties of GaN and AlN Films Formed on SiC/Si Hybrid Substrate, a Porous Basis," Mech. Solids. 55 (2), 157-161 (2020)
Year 2020 Volume 55 Number 2 Pages 157-161
DOI 10.3103/S0025654420020107
Title Elastic Properties of GaN and AlN Films Formed on SiC/Si Hybrid Substrate, a Porous Basis
Author(s) A.S. Grashchenko (ITMO University, St. Petersburg, 197101 Russia, asgrashchenko@bk.ru)
S.A. Kukushkin (Institute for Problems in Mechanical Engineering of the RAS, St. Petersburg, 199078 Russia; Peter the Great St. Petersburg Polytechnic University, St. Petersburg, 195251 Russia; Herzen State Pedagogical University of Russia, St. Petersburg, 191186 Russia)
A.V. Osipov (Institute for Problems in Mechanical Engineering of the RAS, St. Petersburg, 199078 Russia)
Abstract The nanoindentation method was used to study the elastic properties of gallium nitride and aluminum nitride films grown on nanoscale silicon carbide on silicon (SiC/Si), a new type of substrate. The values of the Young's modulus of epitaxial films of such wide-gap semiconductors as GaN and AlN, grown on substrates SiC/Si. were determined for the first time. It was experimentally established using the nanoindentation method that the Young's modulus of the GaN epitaxial layer on SiC/Si is 265 GPa, and that of the AlN film is 223 GPa. Using atomic force microscopy and spectral ellipsometry, the structural characteristics of gallium nitride and aluminum nitride films have been studied. The thicknesses of the films and the roughness of their surface are determined.
Keywords nanoindentation, films, Young's modulus, semiconductors, gallium nitride, aluminum nitride
Received 03 August 2019Revised 11 August 2019Accepted 19 September 2019
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