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IssuesArchive of Issues2018-5pp.481-488

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A.S. Grashchenko, S.A. Kukushkin, A.V. Osipov, and A.V. Red'kov, "Investigation of the Physicomechanical Characteristics of Nanoscale Films by Nanoindentation," Mech. Solids. 53 (5), 481-488 (2018)
Year 2018 Volume 53 Number 5 Pages 481-488
DOI 10.3103/S0025654418080010
Title Investigation of the Physicomechanical Characteristics of Nanoscale Films by Nanoindentation
Author(s) A.S. Grashchenko (Institute of Problems in Mechanical Engineering of the Russian Academy of Sciences, Bol'shoy pr. 61, St. Petersburg, 199078 Russia)
S.A. Kukushkin (Institute of Problems in Mechanical Engineering of the Russian Academy of Sciences, Bol'shoy pr. 61, St. Petersburg, 199078 Russia, sergey.a.kukushkin@gmail.com)
A.V. Osipov (Institute of Problems in Mechanical Engineering of the Russian Academy of Sciences, Bol'shoy pr. 61, St. Petersburg, 199078 Russia)
A.V. Red'kov (Institute of Problems in Mechanical Engineering of the Russian Academy of Sciences, Bol'shoy pr. 61, St. Petersburg, 199078 Russia)
Abstract This article presents a brief review and original studies of the elastic-plastic properties of nanoscale and microscale thin films on substrates. Studies are conducted on the example of wide gap semiconductor films, which are extremely important for modern micro-and-optoelectronics, such as: gallium nitride, silicon carbide and gallium oxide grown on silicon substrates. The focus is on the effect of film nanoscale on methods for analyzing experimental nanoindentation results. In particular, methods for the analysis of two-layer nanoscale films, as well as films of anisotropic materials, are discussed. With the help of Raman maps, the dynamics of elastic stresses in the indenter area are analyzed. The main methods for modeling the elastoplastic properties of films by quantum chemistry and molecular dynamics are considered.
Keywords nanoindentation, nanoscale films, gallium nitride, silicon carbide, gallium oxide, elastic-plastic properties
References
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Received 23 April 2018
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