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IssuesArchive of Issues2013-4pp.431-438

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S.V. Kuz'michev, S.A. Kukushkin, and A.V. Osipov, "Elastic Interaction of Point Defects in Crystals with Cubic Symmetry," Mech. Solids. 48 (4), 431-438 (2013)
Year 2013 Volume 48 Number 4 Pages 431-438
DOI 10.3103/S0025654413040110
Title Elastic Interaction of Point Defects in Crystals with Cubic Symmetry
Author(s) S.V. Kuz'michev (Institute for Problems in Mechanical Engineering, Russian Academy of Sciences, Bol'shoy pr-t 61, St. Petersburg, 199178 Russia, sergey.kuzmichev@gmail.com)
S.A. Kukushkin (Institute for Problems in Mechanical Engineering, Russian Academy of Sciences, Bol'shoy pr-t 61, St. Petersburg, 199178 Russia, kukushkin_s@yahoo.com)
A.V. Osipov (Institute for Problems in Mechanical Engineering, Russian Academy of Sciences, Bol'shoy pr-t 61, St. Petersburg, 199178 Russia)
Abstract The energy of elastic mechanical interaction between point defects in cubic crystals is analyzed numerically. The finite-element complex ANSYS is used to investigate the character of interaction between point defects depending on their location along the crystallographic directions <100>, <110>, <111> and on the distance from the free boundary of the crystal. The numerical results are compared with the results of analytic computations of the energy of interaction between two point defects in an infinite anisotropic medium with cubic symmetry. The interaction between compressible and incompressible defects of general type is studied. Conditions for onset of elastic attraction between the defects, which leads to general relaxation of the crystal elastic energy, are obtained.
Keywords point defect interaction, elastic energy relaxation, dilatation center, heteroepitaxy
References
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2.  S. A. Kukushkin and A. V. Osipov, "A New Mechanism of Elastic Energy Relaxation in Heteroepitaxy of Monocrystalline Films: Interaction of Point Defects and Dilatation Dipoles," Izv. Akad. Nauk. Mekh. Tverd. Tela, No. 2, 122-136 (2013) [Mech. Solids (Engl. Transl.) 48 (2), 216-227 (2013)].
3.  S. A. Kukushkin and A. V. Osipov, "A New Method for the Synthesis of Epitaxial Layers of Silicon Carbide on Silicon Owing to Formation of Dilatation Dipoles," J. Appl. Phys. 113 (2), 024909-1-024909-7 (2013).
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Received 07 April 2013
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