 | | Mechanics of Solids
A Journal of Russian Academy of Sciences | | Founded
in January 1966
Issued 6 times a year
Print ISSN 0025-6544
Online ISSN 1934-7936 |
Archive of Issues
| Total articles in the database: | | 11262 |
| In Russian (Èçâ. ÐÀÍ. ÌÒÒ): | | 8011
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| In English (Mech. Solids): | | 3251 |
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| << Previous article | Volume 58, Issue 9 / 2023 | Next article >> |
| G. Geetanjali, A. Bajpai, and P.K. Sharma, "Memory Response of Photo-Thermo-Diffusive Elastic Medium Containing a Spherical Cavity with Nonlocal Effects," Mech. Solids. 58 (9), 3244-3262 (2023) |
| Year |
2023 |
Volume |
58 |
Number |
9 |
Pages |
3244-3262 |
| DOI |
10.3103/S0025654423600654 |
| Title |
Memory Response of Photo-Thermo-Diffusive Elastic Medium Containing a Spherical Cavity with Nonlocal Effects |
| Author(s) |
G. Geetanjali (Department of Mathematics and Scientific Computing, National Institute of Technology, Hamirpur, Himachal Pradesh, 177005 India, geetanjaligsd@gmail.com)
A. Bajpai (Department of Mathematics and Scientific Computing, National Institute of Technology, Hamirpur, Himachal Pradesh, 177005 India, ankitbajpai@nith.ac.in)
P.K. Sharma (Department of Mathematics and Scientific Computing, National Institute of Technology, Hamirpur, Himachal Pradesh, 177005 India, psharma@nith.ac.in) |
| Abstract |
Motivated by the expanding demand of semiconductors at miniature/nanoscales used in micro-electromechanical systems and nano-electromechanical systems, etc., authors solved the problem of coupled plasma, thermal, elastic, and diffusion waves due to photothermal transport processes
within an infinite semiconductor medium containing a spherical cavity. To highlight the hereditary
properties, thermal and diffusion processes are considered to be memory dependent. The investigation
is carried out in the context of a generalized photothermo-elastic-diffusion model considering the spatial nonlocal effects of concentration, thermal, and strain fields, which augments the novelty of the
present work. Initially, the medium is held quiescent. The boundary of the cavity is subjected to an
exponentially decaying pulse, and carrier density is expressed in terms of recombination velocity.
Laplace transformation, along with the numerical inversion technique using the physical data of silicon, is applied to solve the governing equations and constitutive relations of the problem. The distribution of dimensionless quantities such as temperature, radial stress, and carrier density is represented
graphically. |
| Keywords |
diffusion, nonlocal, photothermal, semiconductor, spherical cavity, thermoelasticity |
| Received |
22 April 2023 | Revised |
06 October 2023 | Accepted |
08 October 2023 |
| Link to Fulltext |
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