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IssuesArchive of Issues2020-1pp.84-89

Archive of Issues

Total articles in the database: 4725
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A.V. Babaev, V.K. Nevolin, V.N. Statsenko, S.D. Fedotov, and K.A. Tsarik, "Singularities of the Thin AlN Layers Formation by Molecular Beam Epitaxy on 3C−SiC/Si(111) Templates with On-Axis and 4 Off-Axis Disorientation," Mech. Solids. 55 (1), 84-89 (2020)
Year 2020 Volume 55 Number 1 Pages 84-89
DOI 10.3103/S0025654420010045
Title Singularities of the Thin AlN Layers Formation by Molecular Beam Epitaxy on 3C−SiC/Si(111) Templates with On-Axis and 4 Off-Axis Disorientation
Author(s) A.V. Babaev (ONSI Ltd., Zelenograd, Moscow, 124482 Russia; Joint-Stock Company "Epiel", Zelenograd, Moscow, 124460 Russia)
V.K. Nevolin (National Research University of Electronic Technology-MIET, Zelenograd, Moscow, 124498 Russia)
V.N. Statsenko (Joint-Stock Company "Epiel", Zelenograd, Moscow, 124460 Russia)
S.D. Fedotov (ONSI Ltd., Zelenograd, Moscow, 124482 Russia; Joint-Stock Company "Epiel", Zelenograd, Moscow, 124460 Russia, fedotov.s.d@yandex.ru)
K.A. Tsarik (National Research University of Electronic Technology-MIET, Zelenograd, Moscow, 124498 Russia)
Abstract In this article, we studied the growth characteristics of AlN epitaxial layers on 3−SiC/Si(111) templates at various values of atomic flux of aluminum at a constant growth temperature and a constant flow of atomic nitrogen. The AFM method was used to study the morphology of the resulting structures. The minimum roughness was achieved at a growth rate of 150 nm/h on on-axis templates, and at 90 nm/h on off-axis templates. Epitaxial layers of hexagonal AlN with root mean square roughness of less than 3 nm were obtained on 3−SiC/Si(111) templates with a diameter of 100 mm, in which there was no grain structure. Single-crystal AlN (0002) layers with FWHM (ω-geometry) values of about 1.4 were obtained.
Keywords molecular beam epitaxy, MBE, gallium nitride, GaN, aluminum nitride, AlN, silicon carbide, 3C−SiC
Received 10 March 2018Revised 04 April 2019Accepted 24 April 2019
Link to Fulltext https://link.springer.com/article/10.3103/S0025654420010045
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