Mechanics of Solids (about journal) Mechanics of Solids
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IssuesArchive of Issues2020-1pp.77-83

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A.V. Redkov, S.A. Kukushkin, and A.V. Osipov, "Vacancy Growth of a Faceted Pore in a Crystal via Chernov Mechanism," Mech. Solids. 55 (1), 77-83 (2020)
Year 2020 Volume 55 Number 1 Pages 77-83
DOI 10.3103/S0025654420010136
Title Vacancy Growth of a Faceted Pore in a Crystal via Chernov Mechanism
Author(s) A.V. Redkov (Institute for Problems in Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, 199078 Russia, avredkov@gmail.com)
S.A. Kukushkin (Institute for Problems in Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, 199078 Russia)
A.V. Osipov (ITMO University, St. Petersburg, 197101 Russia)
Abstract The vacancy growth of a faceted pore in a crystal via Chernov mechanism is studied. It is assumed that the growth is due to the diffusion of excess vacancies arising in the bulk of the crystal under the influence of mechanical tensile stress. In the framework of the formalism proposed by Chernov, the distribution of vacancies in the crystal near the step and its rate of advance are found. A connection is established between the normal pore growth rate and the applied mechanical stress. The growth due to the advance of a set of equidistant "void" steps as well as due to advance of the spiral step that arose at the exit point of the screw dislocation are considered. The results can be used to analyze the durability of materials subjected constantly to low tensile stresss.
Keywords pore, growth, vacancy, crystal, fracture, Chernov mechanism
Received 14 August 2019Revised 26 August 2019Accepted 18 September 2019
Link to Fulltext https://link.springer.com/article/10.3103/S0025654420010136
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