Mechanics of Solids (about journal) Mechanics of Solids
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in January 1966
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IssuesArchive of Issues2020-1pp.114-123

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Total articles in the database: 4725
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G.I. Zmievskaya, "Stochastic Model of Pore Nucleation when the Sample is Irradiates with Inert Gas Ions," Mech. Solids. 55 (1), 114-123 (2020)
Year 2020 Volume 55 Number 1 Pages 114-123
DOI 10.3103/S0025654420010215
Title Stochastic Model of Pore Nucleation when the Sample is Irradiates with Inert Gas Ions
Author(s) G.I. Zmievskaya (Keldysh Institute of Applied Mathematics, Moscow, 125047 Russia,
Abstract Non-point vacancy-gas defects (VGD) (pores, blisters) in the crystal lattice arise as a result of its irradiation with an inert gas Xe++, the process is considered as the formation of first-order phase transition nuclei by means of computational mathematics, kinetic theory, and the theory of stochastic dynamic variables and Wiener random processes. The characteristics of disordered porosity in samples consisting of layers ("dielectric/metal") at various layer thicknesses are calculated. The formation of spherical shape defects in materials at times of the order of 10−4 s, when the porosity of the material nucleates, is preceded or accompanied by the appearance of microcracks. Irradiation of surfaces with an inert gas with ion energies of 5-10 keV refers to low-temperature blistering; in the model, the constancy of the influence of radiation fluxes stimulating a phase transition creates the condition of an "open" physical system in which it is possible to combine lattice defects into structures that cause local stresses, and the constancy of the temperature of the sample, the pressure of the implantable "monomers" of the gas, and supersaturation (similar to the parameters of vapor condensation) are characteristic of the fluctuation unstable stage of the phase transition move. Partial kinetic equations with nonlinear coefficients (Kolmogorov-Feller and Einstein-Smoluchowski) are solved by the method of stochastic molecular dynamics, which establishes a connection between the solution of Ito stochastic equations in the sense of Stratonovich and kinetic equations; stable numerical methods are used. The conditions for the formation of VGD are determined taking into account the influence of the elastic properties of the lattice, and the porosity and local stresses in thin layers of irradiated materials are calculated.
Keywords kinetic theory, stochastic modeling, porosity, local stresses, silicon carbide
Received 01 July 2019Revised 04 August 2019Accepted 18 September 2019
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