 | | Mechanics of Solids
A Journal of Russian Academy of Sciences | | Founded
in January 1966
Issued 6 times a year
Print ISSN 0025-6544
Online ISSN 1934-7936 |
Archive of Issues
| Total articles in the database: | | 11223 |
| In Russian (Èçâ. ÐÀÍ. ÌÒÒ): | | 8011
|
| In English (Mech. Solids): | | 3212 |
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| S.A. Kukushkin and A.V. Osipov, "A New Mechanism of Elastic Energy Relaxation in Heteroepitaxy of Monocrystalline Films: Interaction of Point Defects and Dilatation Dipoles," Mech. Solids. 48 (2), 216-227 (2013) |
| Year |
2013 |
Volume |
48 |
Number |
2 |
Pages |
216-227 |
| DOI |
10.3103/S0025654413020143 |
| Title |
A New Mechanism of Elastic Energy Relaxation in Heteroepitaxy of Monocrystalline Films: Interaction of Point Defects and Dilatation Dipoles |
| Author(s) |
S.A. Kukushkin (Institute for Problems in Mechanical Engineering, Russian Academy of Sciences, Bol'shoy pr-t 61, St. Petersburg, 199178 Russia, kukushkin_s@yahoo.com)
A.V. Osipov (Institute for Problems in Mechanical Engineering, Russian Academy of Sciences, Bol'shoy pr-t 61, St. Petersburg, 199178 Russia) |
| Abstract |
A new method for growing a low-defect elastic-stress-free silicon carbide film on silicon substrates is theoretically developed and experimentally implemented. In this method, the relaxation of inevitable elastic stresses is attained by an essentially new mechanism, namely, by dilatation dipoles (stable complexes consisting of attracting dilatation centers) formed by a carbon atom in interstitial position and a silicon vacancy. The tensor Green function for elastic-anisotropic media is used to obtain the dependence of the point defect interaction energy on their mutual crystallographic location in silicon. It is shown that the situation where the dilatation dipole is perpendicular to the plane (111) is most efficient for a cubic crystal. In this case, practically the whole elastic energy of the film dilatation can be relaxed only at the expense of dipoles, and this must produce a high quality of silicon carbide films.
The assembly of nanoscale silicon carbide films on a silicon
substrate was realized for the first time in practice by synthesis of dilatation dipoles, which play the role of molecular seeds. Highly perfect carbide layers were grown on silicon substrate, and all of their basic characteristics were measured. Such films were for the first time used to produce a wide-band light-emitting diode structure on silicon. |
| Keywords |
heteroepitaxy, point defect interaction, elastic energy relaxation, dilatation centers |
| References |
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|
| Received |
28 October 2011 |
| Link to Fulltext |
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